ATOMIC LAYER PROCESS CHAMBER FOR 3D CONFORMAL PROCESSING

摘要

Embodiments described herein relate to methods for forming or treating material layers on semiconductor substrates. In one embodiment, a method for performing an atomic layer process includes delivering a species to a surface of a substrate at a first temperature, followed by spike annealing the surface of the substrate to a second temperature to cause a reaction between the species and the molecules on the surface of the substrate. The second temperature is higher than the first temperature. By repeating the delivering and spike annealing processes, a conformal layer is formed on the surface of the substrate or a conformal etching process is performed on the surface of the substrate.

主权项

1. A method, comprising:
delivering a species to a surface of a substrate, wherein the substrate is at a first temperature, wherein the species is adsorbed on the surface of the substrate; heating the surface of the substrate to a second temperature, wherein at the second temperature the species reacts with the surface of the substrate; and repeating the delivering and the heating processes.