NON VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a method of manufacturing the same are provided to relatively increase a ratio of a channel width of a selection transistor to a channel width of an access transistor included in each memory cell, thereby increasing efficiency during a program operation about each memory cell by increasing a voltage difference between a source area and a drain area of the access transistor. CONSTITUTION: A nonvolatile memory device includes a plurality of word lines(WL_0~WL-n), a plurality of bit lines, a plurality of memory cells, a common control gate line, a common erase gate line and a common bit line selecting line. The bit lines(BL_0~BL_n) cross the word lines. The memory cells(MC0~MC3) are arranged in an area where the bit lines cross the word lines. The common control gate line is commonly connected to the memory cells. The common erase gate line is commonly connected to the memory cells. The common bit line selecting line is commonly connected to the memory cells.