| 发明名称 |
LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE |
| 摘要 |
A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer. |
| 申请公布号 |
US2016343911(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201615226304 |
申请日期 |
2016.08.02 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
CHAE Jong Hyeon;JANG Jong Min;ROH Won Young;SUH Daewoong;CHO Dae Sung;LEE Joon Sup;LEE Kyu Ho;IN Chi Hyun |
| 分类号 |
H01L33/40;H01L33/46;H01L33/42;H01L33/20;H01L33/32;H01L33/12 |
主分类号 |
H01L33/40 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A light emitting diode, comprising:
a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer; a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer; a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer; a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions; and an insulation layer comprising a first opening exposing the reflective electrode between the first and second n-contact regions, and wherein each of the first and second n-contact regions has a second opening that exposes the first conductive type semiconductor layer. |
| 地址 |
Ansan-si KR |
