| 摘要 |
A process for forming a resist pattern comprises the steps of applying on a substrate to form a photosensitive resist layer a photosensitive composition comprising at least one photosensitive compound having, in the molecule, two or more structural units represented by C<SUB>6</SUB>R<SUB>2-6</SUB>-CHR<SUB>1</SUB>-OR<SUB>7 </SUB>or C<SUB>6</SUB>R<SUB>2-6</SUB>-CHR<SUB>1</SUB>-COOR<SUB>7 </SUB>where R<SUB>1 </SUB>is a hydrogen atom or an alkyl group, at least one of R<SUB>2</SUB>, R<SUB>3</SUB>, R<SUB>4</SUB>, R<SUB>5</SUB>, and R<SUB>6 </SUB>is a nitro group, and others are selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl, an alkoxy, a phenyl, a naphthyl, and an alkyl in which a part or the entire of hydrogen atoms are substituted by a fluorine atom, and R<SUB>7 </SUB>is a substituted or unsubstituted phenylene or naphthylene group dissolved in an organic solvent, irradiating the resist layer selectively with a radiation ray, and developing a portion irradiated by the ray to form a pattern of the resist layer.
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