| 摘要 |
This terahertz element (30) is provided with: a semiconductor substrate (1); a first semiconductor layer (91a) that is arranged on the semiconductor substrate (1); an active element (90) that is formed by lamination on the first semiconductor layer (91a); a second electrode (2) that is arranged on the semiconductor substrate (1) and is connected to the first semiconductor layer (91a) and a cathode K of the active element (90); a first electrode (4) that is connected to an anode A of the active element (90) and is arranged on the semiconductor substrate (1) so as to face the second electrode (2); and a backside reflective metal layer (88) that is arranged on the back surface of the semiconductor substrate (1), said back surface being on the reverse side of the first semiconductor layer (91a)-side surface. The active element (90) forms a resonator between the second electrode (2) and the first electrode (4) and an electromagnetic wave is reflected by the backside reflective metal layer (88), so that this terahertz element has a surface light radiation pattern or a surface light reception pattern in a direction that is perpendicular to the semiconductor substrate (1). |
