发明名称 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
摘要 A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
申请公布号 US2016336458(A1) 申请公布日期 2016.11.17
申请号 US201615149587 申请日期 2016.05.09
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Gao Jincheng;Zhang Bin;He Xiaolong;Kong Xiangchun;Yao Qi;Cao Zhanfeng;Li Zhengliang
分类号 H01L29/786;H01L29/66;H01L27/12 主分类号 H01L29/786
代理机构 代理人
主权项 1. A method of fabricating a thin film transistor, comprising: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
地址 Beijing CN