发明名称 |
THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode. |
申请公布号 |
US2016336458(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
US201615149587 |
申请日期 |
2016.05.09 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Gao Jincheng;Zhang Bin;He Xiaolong;Kong Xiangchun;Yao Qi;Cao Zhanfeng;Li Zhengliang |
分类号 |
H01L29/786;H01L29/66;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of fabricating a thin film transistor, comprising:
forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode. |
地址 |
Beijing CN |