| 摘要 |
A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg. The memory transistor (10A) includes a gate electrode (3), a metal oxide layer (7), a gate insulating film (5), and source and drain electrodes. The drain electrode (9d) has a multilayer structure which includes a first drain metal layer (9d1) and a second drain metal layer (9d2), the first drain metal layer (9d1) being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer (9d2) being made of a second metal whose melting point is lower than that of the first metal. Part P of the drain electrode 9d extends over both the metal oxide layer (7) and the gate electrode (3) when viewed in a direction normal to a surface of the substrate. The part (P) of the drain electrode (9d) includes the first drain metal layer (9d1) and does not include the second drain metal layer (9d2). |
| 主权项 |
1. A semiconductor device comprising a substrate and at least one memory transistor supported on the substrate, wherein
the at least one memory transistor is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Ids depends on a gate voltage Vg to a resistor state where the drain current Ids does not depend on the gate voltage Vg, the at least one memory transistor includes a gate electrode, a metal oxide layer, a gate insulating film provided between the gate electrode and the metal oxide layer, and a source electrode and a drain electrode which are electrically connected with the metal oxide layer, the drain electrode has a multilayer structure which includes a first drain metal layer and a second drain metal layer, the first drain metal layer being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer being made of a second metal whose melting point is lower than that of the first metal, when viewed in a direction normal to a surface of the substrate, a part of the drain electrode extends over both the metal oxide layer and the gate electrode, and the part of the drain electrode includes the first drain metal layer and does not include the second drain metal layer. |
