发明名称 |
Method for the Optical Characterization of an Optoelectronic Semiconductor Material and Device for Carrying Out the Method |
摘要 |
A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided. |
申请公布号 |
US2016282271(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201415030553 |
申请日期 |
2014.11.14 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
EBBECKE Jens;KUGLER Siegmar;MEYER Tobias;PETER Matthias |
分类号 |
G01N21/64;G01N21/88;G01N21/95 |
主分类号 |
G01N21/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Regensburg DE |