发明名称 |
MANUFACTURING METHOD OF THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND THIN-FILM TRANSISTOR ARRAY SUBSTRATE THEREOF |
摘要 |
Provided is a method of manufacturing TFT substrate, the method including: forming a first conductive layer and a gate electrode; forming a gate insulating layer covering the first conductive layer and the gate electrode; forming a first contact hole exposing the first conductive layer through the gate insulating layer; forming, on the gate insulating layer of a pixel area, an oxide semiconductor pattern comprising a first region which is conductive, a second region which is conductive, and a third region between the first region and the second region; forming a source electrode contacting the first region of the oxide semiconductor pattern, a drain electrode contacting the second region of the oxide semiconductor pattern and a second conductive layer contacting the first conductive layer on a non-pixel area. Each of the first region and the second region overlaps the gate electrode. |
申请公布号 |
US2016300852(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514927269 |
申请日期 |
2015.10.29 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Park Junhyun;Kim Sunghwan;Shin Kyoungju;Chai Chongchul |
分类号 |
H01L27/12;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a thin film transistor (TFT) substrate, the method comprising:
forming a first conductive layer on a non-pixel area of a substrate and a gate electrode on a pixel area of the substrate; forming a gate insulating layer covering the first conductive layer and the gate electrode; forming a first contact hole exposing the first conductive layer through the gate insulating layer; forming, on the gate insulating layer of the pixel area, an oxide semiconductor pattern comprising a first region which is conductive, a second region which is conductive, and a third region between the first region and the second region; forming a source electrode contacting the first region of the oxide semiconductor pattern, a drain electrode contacting the second region of the oxide semiconductor pattern and a second conductive layer contacting the first conductive layer on a non-pixel area, wherein each of the first region and the second region overlaps the gate electrode. |
地址 |
Yongin-City KR |