摘要 |
PROBLEM TO BE SOLVED: To dice a substrate safely without adhering foreign matters to a semiconductor device or reducing the number of semiconductor devices on the substrate when dicing the substrate into chips. SOLUTION: When dicing a silicon substrate 1 wherein a plurality of semiconductor devices 2 are formed into chips 5, grooves 4 are formed at first on the silicon substrate 1 through dry etching. Thereafter, the silicon substrate 1 is cut along the grooves 4 whereby the silicon substrate 1 is diced into semiconductor devices 2. The silicon substrate can be optimally diced without employing a dicing saw as in a conventional case. COPYRIGHT: (C)2005,JPO&NCIPI |