发明名称 |
Ferro-electric memory device and method of manufacturing the same |
摘要 |
A ferro-electric memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate, and a first ferro-electric capacitor electrically connected to the first transistor and formed of a first capacitor material layer having a first lower electrode, a first ferro- electric film, and a first upper electrode, the first ferro-electric capacitor being thicker at its central portion than at its ends.
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申请公布号 |
US2005167716(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20040805208 |
申请日期 |
2004.03.22 |
申请人 |
KUMURA YOSHINORI;KUNISHIMA IWAO |
发明人 |
KUMURA YOSHINORI;KUNISHIMA IWAO |
分类号 |
H01L27/10;H01L21/02;H01L21/8246;H01L27/105;H01L27/115;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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