| 摘要 |
A process is provided for fabricating an in-situ sealed integrated vacuum device ( 30 ). The process comprises growing an electron emissive material ( 24 ) on a cathode layer ( 14 ) within a well ( 22 ) surrounded by a dielectric ( 16, 20 ), and forming, in a vacuum, an anode ( 32 ) on the dielectric ( 16, 20 ) and above the well ( 22 ), thereby encasing the vacuum within the well ( 22 ).
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