发明名称 |
METHODS AND APPARATUSES INCLUDING A SELECT TRANSISTOR HAVING A BODY REGION INCLUDING MONOCRYSTALLINE SEMICONDUCTOR MATERIAL AND/OR AT LEAST A PORTION OF ITS GATE LOCATED IN A SUBSTRATE |
摘要 |
Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described. |
申请公布号 |
US2016163727(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201615043921 |
申请日期 |
2016.02.15 |
申请人 |
Micron Technology, Inc. |
发明人 |
Tanzawa Toru |
分类号 |
H01L27/115;H01L29/04;H01L29/16 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus comprising:
a first material; pedestals formed from a second material overlying the first material, the first and second materials including monocrystalline semiconductor materials of different conductivity types; and a memory cell string overlying a pedestal among the pedestals and including memory cells located in different levels of the apparatus. |
地址 |
Boise ID US |