发明名称 METHODS AND APPARATUSES INCLUDING A SELECT TRANSISTOR HAVING A BODY REGION INCLUDING MONOCRYSTALLINE SEMICONDUCTOR MATERIAL AND/OR AT LEAST A PORTION OF ITS GATE LOCATED IN A SUBSTRATE
摘要 Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described.
申请公布号 US2016163727(A1) 申请公布日期 2016.06.09
申请号 US201615043921 申请日期 2016.02.15
申请人 Micron Technology, Inc. 发明人 Tanzawa Toru
分类号 H01L27/115;H01L29/04;H01L29/16 主分类号 H01L27/115
代理机构 代理人
主权项 1. An apparatus comprising: a first material; pedestals formed from a second material overlying the first material, the first and second materials including monocrystalline semiconductor materials of different conductivity types; and a memory cell string overlying a pedestal among the pedestals and including memory cells located in different levels of the apparatus.
地址 Boise ID US