SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a semiconductor device and a manufacturing method therefor that can prevent electric short-circuiting between redistribution lines. A barrier film is formed over each side surface of a copper redistribution line. The barrier film includes, for example, a manganese oxide film. The barrier film is also in contact with each end surface of a barrier metal film that is located in the position receding inward from the side surface of the copper redistribution line. A redistribution portion is formed by the copper redistribution line, the barrier film, and the barrier metal film.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a main surface; a multi-layer wiring that includes wirings respectively formed over the main surface of the semiconductor substrate and having different heights from the main surface; a passivation film formed to cover an uppermost-layer wiring disposed in a highest position from the main surface in the multi-layer wiring, the passivation film having an opening communicating with the uppermost-layer wiring; a redistribution portion including a redistribution line formed to be in contact with a part of the uppermost-layer wiring positioned in the opening, the redistribution line having a side surface and an upper surface; a pad portion formed to be in contact with the upper surface of the redistribution line; and a resin film formed to cover the redistribution portion, wherein the redistribution portion includes a barrier film formed to be in contact with the side surface of the redistribution line, the barrier film containing a metal oxide film, and wherein the pad portion includes a pad metal film made of material different from that for the barrier film.