SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor having stable electrical characteristics.SOLUTION: A semiconductor device includes: a gate electrode layer; a gate insulation layer with a film thickness of 100 nm or more and 350 nm or less on the gate electrode layer; an oxide semiconductor layer on the gate insulation layer; a source electrode layer and a drain electrode layer on the oxide semiconductor layer; a thin film transistor including the oxide semiconductor layer; and a silicon oxide layer which lies on the source electrode layer and the drain electrode layer to contact a part of the oxide semiconductor layer. The thin film transistor has a difference in threshold voltage values before and after measurement in measurement of applying a voltage of 30 V or -30 V to the gate electrode layer for 12 hours at a temperature of 85°C is equal to or less than 1 V.SELECTED DRAWING: Figure 1