CONCENTRIC GATE NANOTUBE TRANSISTOR DEVICES

摘要

Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate (2620) surrounds at least a portion of a nanotube (2610) in a pore (2510). A transistor of the invention may be especially suited for power transistor or power amplifier applications.