发明名称 PROCESS FOR CLEANING A SEMICONDUCTOR WAFER
摘要 Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film.
申请公布号 US2009071507(A1) 申请公布日期 2009.03.19
申请号 US20080199124 申请日期 2008.08.27
申请人 SILTRONIC AG 发明人 BUSCHHARDT THOMAS;ZAPILKO CLEMENS;FEIJOO DIEGO;SCHWAB GUENTER
分类号 C23G1/02 主分类号 C23G1/02
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