发明名称 |
ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING THIN FILM TRANSISTOR SUBSTRATE USING OXIDE SEMICONDUCTOR |
摘要 |
A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material, forming an etch stopper on a central portion of the semiconductor layer, conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area, and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area. |
申请公布号 |
US2016225883(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615094572 |
申请日期 |
2016.04.08 |
申请人 |
LG Display Co., Ltd. |
发明人 |
HONG Sungjin;AHN Byungchul;KOH Youngju;NAM Woojin;TANI Ryosuke |
分类号 |
H01L29/66;H01L21/4763;H01L27/32;H01L21/44;H01L29/786;H01L29/423 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing an organic light emitting diode (OLED) display, the method comprising:
forming a gate electrode on a substrate; forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material; forming an etch stopper on a central portion of the semiconductor layer; conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area; and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area. |
地址 |
Seoul KR |