发明名称 ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING THIN FILM TRANSISTOR SUBSTRATE USING OXIDE SEMICONDUCTOR
摘要 A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material, forming an etch stopper on a central portion of the semiconductor layer, conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area, and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area.
申请公布号 US2016225883(A1) 申请公布日期 2016.08.04
申请号 US201615094572 申请日期 2016.04.08
申请人 LG Display Co., Ltd. 发明人 HONG Sungjin;AHN Byungchul;KOH Youngju;NAM Woojin;TANI Ryosuke
分类号 H01L29/66;H01L21/4763;H01L27/32;H01L21/44;H01L29/786;H01L29/423 主分类号 H01L29/66
代理机构 代理人
主权项 1. A method for manufacturing an organic light emitting diode (OLED) display, the method comprising: forming a gate electrode on a substrate; forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material; forming an etch stopper on a central portion of the semiconductor layer; conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area; and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area.
地址 Seoul KR
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