GRAPHENE GROWTH ON A CARBON-CONTAINING SEMICONDUCTOR LAYER

摘要

A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm.

主权项

1. A semiconductor structure comprising:
a semiconductor substrate comprising a single crystalline silicon-containing semiconductor material; a semiconductor carbide layer located on said semiconductor substrate and having a thickness less than 10 nm; and a graphene layer consisting of a number of graphene monolayers and abutting said semiconductor carbide layer, wherein said number is equal to or greater than 1 and equal to or less than 4, and wherein said graphene layer has a (0001) crystalline orientation along a surface normal of a top surface of said semiconductor substrate.