Nonvolatile magnetic memory device

摘要

A nonvolatile magnetic memory device with a magnetoresistance-effect element includes a laminated structure, a first wiring line, and a second wiring line. The laminated structure includes a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction. The first wiring line is electrically connected to a lower part of the laminated structure. The second wiring line electrically connected to an upper part of the laminated structure. A high Young's modulus region is provided on a side surface of the laminated structure. A Young's modulus value of a material of the high Young's modulus region is greater than a Young's modulus value of a material of the recording layer.

主权项

1. A nonvolatile magnetic memory device including a magnetoresistance-effect element comprising:
(a) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a direction perpendicular to the recording layer; (b) a first wiring line electrically connected to a lower part of the laminated structure; and (c) a second wiring line electrically connected to an upper part of the laminated structure, wherein, a high Young's modulus region is provided on a side of the laminated structure such that an insulating region exists between the laminated structure and the high Young's modulus region, and a Young's modulus value of a material of the high Young's modulus region is greater than a Young's modulus value of a material of the recording layer, wherein a length of the recording layer is same as a length of the first wiring line.