NONVOLATILE MEMORY DEVICE, PROGRAM METHOD THEREOF, AND STORAGE DEVICE INCLUDING THE SAME

摘要

A nonvolatile memory device includes memory cells stacked in a direction perpendicular to a substrate and further includes a first memory cell string connected between a selected bit line and a selected string selection line, a second memory cell string connected between the selected bit line and an unselected string selection line, and a third memory cell string connected to an unselected bit line. During a bit line setup section of a program operation, a ground voltage is provided to the selected bit line and a power supply voltage provided to the unselected string selection line is changed to the ground voltage.

主权项

1. A nonvolatile memory device which includes a plurality of memory cell strings and each of the memory cell strings including a plurality of memory cells stacked in a direction perpendicular to a substrate, the device comprising:
a first memory cell string coupled to a selected bit line and a selected string selection line; a second memory cell string coupled to the selected bit line and an unselected string selection line; and a third memory cell string coupled to an unselected bit line, wherein during a first bit line setup section of a program operation, a turn-on voltage is applied to both the selected string selection line and the unselected string selection line and during the first bit line setup section of a program operation, a bit line program voltage is applied to the selected bit line and a program inhibition voltage is applied to the unselected bit line.