发明名称 MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING APPARATUS OF MAGNETORESISTIVE EFFECT ELEMENT
摘要 According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.
申请公布号 US2016380189(A1) 申请公布日期 2016.12.29
申请号 US201615263933 申请日期 2016.09.13
申请人 Kabushiki Kaisha Toshiba 发明人 Ohsawa Yuichi;Ito Junichi;Kashiwada Saori;Kamata Chikayoshi;Tamaoki Naoki
分类号 H01L43/12;H01J37/08;H01J37/305;H01L43/10;H01L43/08 主分类号 H01L43/12
代理机构 代理人
主权项 1. (canceled)
地址 Minato-ku JP