| 主权项 |
1. Wafer lithography equipment, comprising:
an exposure unit transferring a circuit pattern onto a wafer; a measurement unit measuring a dimension of the circuit pattern; and a calculator, the calculator including
calculating a first difference, the first difference being the difference between a first dimension and a second dimension, the first dimension being obtained by substituting a first exposure amount and a first focus distance into an approximate response surface function, the second dimension being measured by the measurement unit,calculating a second difference, the second difference being the sum total of the first difference for all of the circuit patterns,calculating a second exposure amount and a second focus distance causing the difference between the approximate response surface function and the second difference to be a minimum,calculating a correction exposure amount, the correction exposure amount being the difference between the first exposure amount and the second exposure amount,calculating a correction focus distance, the correction focus distance being the difference between the first focus distance and the second focus distance,calculating a third exposure amount by adding the correction exposure amount to the first exposure amount, andcalculating a third focus distance by adding the correction focus distance to the first focus distance. |
