发明名称 Semiconductor structure processing using multiple laser beam spots
摘要 Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N / 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.
申请公布号 GB0623283(D0) 申请公布日期 2007.01.03
申请号 GB20060023283 申请日期 2005.06.16
申请人 ELECTRO SCIENTIFIC INDUSTRIES, INC 发明人
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