| 摘要 |
<p>An electronic power semiconductor device is provided to enhance a change rate of voltage which depends on time by separating partially the inner active region of stripe type and outside frame region itself. An electronic power semiconductor device includes a first conductive type drain region(310), a first epitaxial region(320) of a first conductive type on the drain region, a gate electrode(360) on the first epitaxial region via a stripe type gate insulating layer, a second conductive type body region, a first conductive type source region, a gate insulating layer, a source electrode, a frame region, and a drain electrode. The body region is formed like a stripe type structure under the epitaxial region. The source region(380) is formed in the body region. The gate insulating layer is formed on the source region, the body region and the epitaxial region. The source electrode(390) is formed on the source region. The frame region is selectively spaced apart from the body region through both end portions. The drain electrode(300) is formed on a rear surface of the resultant structure.</p> |
