| 摘要 |
PROBLEM TO BE SOLVED: To form a wiring pattern that contains tungsten and has a small line width. SOLUTION: A method of manufacturing a semiconductor device has steps of: forming a wiring layer that has a tungsten layer 18 on the surface thereof above a silicon substrate 11; forming a hard mask 19 on the wiring layer; forming a nitride tungsten layer 21 on the surface of the wiring layer that is exposed from the hard mask 19; etching the nitride tungsten layer 21 while the hard mask 19 is left; and etching the wiring layer using the hard mask 19 as a mask to form a wiring pattern. COPYRIGHT: (C)2008,JPO&INPIT |
