PHOTOLITHOGRAPHY PROCESSING SYSTEM USING A NEGATIVE PHOTORESIST

摘要

A photolithography process system using negative photoresist is provided to accelerate reaction rate of exposed part of the negative photoresist and reduce total average cycle time(TACT) by adapting additional baking part for the negative photoresist to accelerate bonding of polymer chains in the exposed part, increasing the reaction rate of the exposed part and reducing distances between constitutional elements of the system, thereby improving productivity. The system comprises: a coating part(100) for applying the negative photoresist to a substrate; first baking part(300) for removing solvent from the negative photoresist to cure the applied negative photoresist; a main exposure part(500) that aligns the treated substrates and exposes the negative photoresist to transcript a driving circuit pattern on the photoresist; second baking part(700) for baking the treated negative photoresist to accelerate bonding of polymer chains in the exposed part of the photoresist; and a development part(900) for removing unexposed parts of the photoresist to complete the pattern. All of the parts are arranged to be bent at 180 angles around the main exposure part.