Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method

摘要

A group III nitride underlayer including at least Al, having a dislocation density of <=1x10¹¹/cm² and a (002) plane X-ray rocking curve half-width value of <=200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is >=50% and in which a carrier density is >=1x10¹⁶/cm³. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of >=50%.