METHOD FOR FABRICATING ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A method of manufacturing the element isolation film of the semiconductor device selectively removes the liner nitride film of the PMOS region and improves the operating current reduction property at the PMOS area and leakage current property. The trench is formed in the substrate(21) having the cell region and peripheral region. The side wall oxide(26) is formed along the surface of the trench. The liner nitride film is formed on the side wall oxide. The liner nitride film part of the peripheral area is selectively removed. The oxidation process is performed on the liner nitride film part. The element isolation film is formed by filling the trench of the peripheral region with the insulating layer.