| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING DISPLAY APPARATUS INCLUDING THE SAME |
| 摘要 |
A thin film transistor (TFT) substrate includes an insulating layer, an electrode on the insulating layer, and a main buffering layer connecting a side surface of the electrode to an upper surface of the insulating layer. |
| 申请公布号 |
US2016181389(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514796060 |
申请日期 |
2015.07.10 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
SHIN Hyuneok |
| 分类号 |
H01L29/49;H01L21/283;H01L29/423;H01L29/786;H01L29/66 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor (TFT) substrate, comprising:
an insulating layer; an electrode on the insulating layer; and a main buffering layer connecting a side surface of the electrode to an upper surface of the insulating layer. |
| 地址 |
Yongin-City KR |
