| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact. |
| 申请公布号 |
US2016181376(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201615058139 |
申请日期 |
2016.03.01 |
| 申请人 |
FUJI ELECTRIC CO., LTD. ;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
UTSUMI Makoto;SAKAI Yoshiyuki;FUKUDA Kenji;HARADA Shinsuke;OKAMOTO Mitsuo |
| 分类号 |
H01L29/16;H01L29/45;H01L21/283;H01L21/324;H01L29/66;H01L21/04 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a silicon carbide semiconductor device, the method comprising:
selectively forming an infrared ray absorbing film on a surface of a silicon carbide semiconductor substrate in a predetermined area; sequentially forming on the silicon carbide semiconductor substrate an aluminum film and a nickel film in an area excluding the predetermined area in which the infrared ray absorbing film is formed; and uniformly forming an electrode by a rapid annealing process with a predetermined heating rate on the silicon carbide semiconductor substrate. |
| 地址 |
Kawasaki-shi JP |
