发明名称 PROCESS SHEET FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a process sheet for manufacturing a semiconductor device capable of obtaining a semiconductor device with less adhesion of burrs by suppressing resin leakage when a semiconductor chip is encapsulated with a resin, and of removing adhered burrs with ease.SOLUTION: A process sheet 1 for manufacturing a semiconductor device comprises: a base material 3; and an uneven layer 5 contacted with a substrate mounting a semiconductor chip when the semiconductor chip is encapsulated. The uneven layer 5 contains particles 9. An average primary particle diameter R (μm) of the particles 9, a maximum value Tmax (μm) of a thickness of the uneven layer 5, and a minimum value Tmin (μm) of the thickness of the uneven layer 5 satisfy the following formula (1): (Tmin+Tmax)/2×0.5<R<(Tmin+Tmax)/2×1.3 (1).SELECTED DRAWING: Figure 1
申请公布号 JP2016192503(A) 申请公布日期 2016.11.10
申请号 JP20150071951 申请日期 2015.03.31
申请人 TOMOEGAWA PAPER CO LTD 发明人 KASUGA HIDEMASA;SATO TAKESHI;MATSUMOTO YAMATO
分类号 H01L21/56;B32B27/00;B32B27/20 主分类号 H01L21/56
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