发明名称 METHOD FOR MAKING A DISMOUNTABLE SUBSTRATE
摘要 <p>The invention concerns a method for producing a growth mask on the surface of an initial crystalline substrate (1) including the following steps: forming a second material layer (2) on one of the sides of the first material initial substrate (1); forming a pattern in the thickness of the second material layer (2) so as to expose zones of said side of the initial substrate, said zones forming growth windows on the initial substrate. Said method is characterized in that the formation of the pattern is obtained by ionic implantation provided in the surface layer of the initial substrate underlying the second material layer, the conditions of implantation being such that they bring about, directly or following heat treatment, on said side of the initial substrate, the occurrence of exfoliated zones (5) of first material causing the localized removal of second material zones covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows (6) on the initial substrate. The invention also concerns methods for producing a thin crystalline layer and transferring said thin layer on a receiving substrate.</p>
申请公布号 WO2006090034(A1) 申请公布日期 2006.08.31
申请号 WO2005FR50994 申请日期 2005.11.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;TAUZIN, AURELIE;LAGAHE-BLANCHARD, CHRYSTELLE 发明人 TAUZIN, AURELIE;LAGAHE-BLANCHARD, CHRYSTELLE
分类号 C30B33/02;C30B31/22;H01L21/762 主分类号 C30B33/02
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