| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thermal treatment method of a semiconductor substrate for stably manufacturing the semiconductor substrate in which the in-plane variation of the distribution of a dopant diffused in the semiconductor substrate is suppressed, when the thermal processing is performed to diffuse a diffusate in the semiconductor substrate using a horizontal diffusion furnace. <P>SOLUTION: The thermal treatment method of a semiconductor substrate which diffuses the diffusate serving as the dopant within the semiconductor substrate in the semiconductor substrate has a process to coat a diffusing agent containing at least the above diffusate and silica at least in the surface of the semiconductor substrate, a process to mount the plurality of semiconductor substrates coated by the diffusing agent on the board for diffusion, a process to inject the board for diffusing on which the plurality of the semiconductor substrates is mounted into the horizontal diffusion furnace at a rate of 500 mm or more per minutes, and a process to diffuse the diffusate in the semiconductor substrate by thermal processing the plurality of semiconductor substrates at once in the horizontal diffusion furnace. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
