| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal by the Czochralski method, by which a single crystal free of crystal defects such as COP (crystal-originated particle: hollow type defects) or dislocation clusters can be produced efficiently in a high yield. SOLUTION: The distance Dm between the surface of a raw material melt 6 and a heat shielding member 10 arranged opposite to the surface of the melt 6 is changed based on changes with time of the conditions in a chamber 1, such as heater 4 temperature at the completion of a seed crystal 8 accustoming operation performed before growing a single crystal after a raw material is melted, the period from the completion of melting of the raw material to the completion of the seed crystal 8 accustoming operation or the like. Thereby, the temperature gradient in the crystal is appropriately controlled from immediately after the start of pulling, and a single crystal 9 having a desired defect region can be produced efficiently in a high yield. COPYRIGHT: (C)2010,JPO&INPIT
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