IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS

摘要

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

主权项

1. An ion implantation system, comprising:
a component within a chamber of the ion implantation system; a power supply in communication with the component, the power supply configured to supply a voltage and a current to the component during a cleaning mode, wherein the voltage and the current are applied to a conductive beam optic of the component to generate a plasma around the conductive beam optic; and an etchant gas supplied to the component to enable etching of the conductive beam optic.