发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION SYSTEM USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing heating concentration breakdown due to heat evolution in a sense emitter connection part and an electric power conversion system using the same.SOLUTION: A semiconductor device comprises: a first electrode layer formed on one principal surface of a semiconductor substrate; and a second electrode layer formed on the other principal surface of the semiconductor substrate. The semiconductor device is constructed so as to take an electrical conduction to an external part by contacting the first electrode layer and second electrode layer in a vertical direction to the layer with a pressure, and can be actively switched the electrical conduction by an external signal. The semiconductor device further comprises: a first region to be press-fitted in a region of the first electrode layer; and a second region for taking out a sense potential in a part outside the first region to be press-fitted. The second region serves as a conduction suppression part in a conductive state.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016219521(A) |
申请公布日期 |
2016.12.22 |
申请号 |
JP20150100697 |
申请日期 |
2015.05.18 |
申请人 |
HITACHI LTD |
发明人 |
ARAI TAIKA;MASUNAGA MASAHIRO;MORI MUTSUHIRO |
分类号 |
H01L29/739;H01L21/3205;H01L21/768;H01L23/522;H01L25/07;H01L25/18;H01L29/12;H01L29/41;H01L29/417;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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