METHOD OF MANUFACTURING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer in which a less-defect epitaxial wafer having good fitness can be stably manufactured.SOLUTION: There is provided a method of manufacturing an epitaxial wafer, the method comprising the steps of: using a both-side polishing apparatus comprising upper and lower surface plates where abrasive cloth is stuck, and a carrier holding a silicon wafer between the upper and lower surface plates, and performing primary polishing for polishing both sides of the silicon wafer while supplying slurry including first abrasive grains; using the both-side polishing apparatus and performing secondary polishing for polishing both sides of the silicon wafer having been subjected to the primary polishing while supplying slurry including second abrasive grains having smaller mean particle size than the first abrasive grains; and growing an epitaxial layer on a top surface of the silicon wafer having been subjected to the secondary polishing without one-side CMP polishing.SELECTED DRAWING: Figure 1