METHODS FOR SHIELDING A PLASMA ETCHER ELECTRODE

摘要

Methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.

主权项

1. A method of wafer etching in a plasma etcher, the method comprising:
positioning a wafer on a feature plate; clamping the wafer against the feature plate using a clamp; generating plasma ions from a plasma source gas using a radio frequency power source that is electrically connected between an anode and a cathode, the anode positioned over the feature plate and the cathode positioned below the feature plate; protecting a portion of the cathode that is connected to the feature plate from the plasma ions using an electrode shield; and measuring at least one electrical characteristic of the feature plate based on passing a portion of the plasma ions through one or more electrical measurement holes of the clamp to impact the feature plate.