| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN substrate in which flattening of a surface is attained, and method of fabricating the same, and to provide a nitride semiconductor device and method of fabricating the same. <P>SOLUTION: The GaN substrate 28 includes a GaN single crystal substrate 14, an AlGaN (0<x≤1) intermediate layer 24 epitaxially grown on the substrate 14, and a GaN upper layer 26 epitaxially grown on the intermediate layer 24. The intermediate layer 24 is made of AlGaN and this AlGaN grows over an entire principal surface 14a including regions with contaminants thereon. Thus, the intermediate layer 24 is normally grown on the substrate 14, and a growth surface 24a of the intermediate layer can be made flat. Since the growth surface 24a of the intermediate layer 24 is flat, a growth surface 26a of the upper layer 26 epitaxially grown on the intermediate layer 24 is also flat. <P>COPYRIGHT: (C)2009,JPO&INPIT |
