| 发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR |
| 摘要 |
A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAlyNz (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni). |
| 申请公布号 |
US2016189831(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201414906913 |
申请日期 |
2014.07.24 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Fujita Toshiaki;Tanaka Hiroshi;Nagatomo Noriaki |
| 分类号 |
H01C7/00;C23C14/58;C23C14/00;G01K7/22;C23C14/06 |
主分类号 |
H01C7/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: MxAlyNz (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≦y/(x+y)≦0.98, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |
| 地址 |
Tokyo JP |
