| 摘要 |
The invention relates to a compound (4) comprising a glass carrier (3) and a glass film (1) or comprising a silicon wafer (2), wherein the glass film (1) or the silicon wafer (2) has a thickness of at most 400 μm, particularly preferably of less than 145 μm, wherein the glass carrier (3) has a greater thickness than the glass film (1) or the silicon wafer (2), and a surface (10) of the glass film (1) or of the silicon wafer (2) is directly adhesively joined to a surface (30) of the glass carrier (3), and wherein the difference of the linear expansion coefficients of the glasses of the glass carrier and glass film or silicon wafer is less than 0.3*10-6 K-1, preferably less than 0.2*10-6 K-1, according to amount, in a temperature interval of between 20 and 200 °C |
