Provided is a TFT layout structure comprising a first thin-film transistor and a second thin-film transistor controlled by a same control signal line. A first active layer (SC1) of the first thin-film transistor and a second active layer (SC2) of the second thin film transistor are arranged at different layers and are spatially in a stacked arrangement. A first source (S1) and a first drain (D1) of the first thin-film transistor are formed on the first active layer (SC1). A second source (S2) and a second drain (D2) of the second thin-film transistor are formed on the second active layer (SC2). A gate layer is electrically connected to the control signal line to control the opening and closing of the first and second thin-film transistors. The TFT layout structure is capable of reducing the footprint of a circuit layout, increasing the aperture ratio of a display panel, and satisfying requirements for a narrow edge frame and high resolution on the display panel.
申请公布号
WO2016165183(A1)
申请公布日期
2016.10.20
申请号
WO2015CN79425
申请日期
2015.05.21
申请人
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD.