Multi-section rod semiconductor light-emitting device and manufacturing method thereof

摘要

A semiconductor light-emitting device including a substrate, a first-type doped semiconductor structure, a light-emitting layer, and a second-type doped semiconductor layer is provided. The first-type doped semiconductor structure is located on the substrate and includes a base and multi-section rod structures extended upward from the base. Each multi-section rod structure includes rods and at least one connecting portion. The connecting portion connects adjacent rods along a first direction, wherein the first direction is perpendicular to the base and points to the connecting portion from the base. Cross-section areas of different rods on a reference plane parallel to the substrate are different, and cross-section areas of the connecting portion on the reference plane decrease along the first direction. The light-emitting layer is located on sidewalls of the rods. The second-type doped semiconductor layer is located on the light-emitting layer. A manufacturing method of the semiconductor light-emitting device is also provided.

主权项

1. A manufacturing method of a semiconductor light-emitting device, comprising:
forming a first-type doped semiconductor structure on a substrate, wherein the first-type doped semiconductor structure comprises a base and a plurality of multi-section rod structures extended upward from the base, each multi-section rod structure comprises a plurality of rods and at least one connecting portion, the connecting portion connects two adjacent rods along a first direction, the first direction is perpendicular to the base and points to the connecting portion from the base, cross-section areas of different rods on a reference surface parallel to the substrate are different, and cross-section areas of the connecting portion on the reference plane decrease along the first direction; forming a light-emitting layer on sidewalls of the rods; and forming a second-type semiconductor layer on the light-emitting layer, wherein a material of the first-type doped semiconductor structure comprises a Group III element and a Group V element, a method of forming the rods and the connecting portion respectively comprises performing a plurality of pulsed growth processes, each pulsed growth process comprises separately supplying an atom source of the Group III element once and supplying an atom source of the Group V element once, and wherein in the pulsed growth processes forming the rods, supply durations of the atom source of the Group III element are all the same, in the pulsed growth processes forming the connecting portion, the supply durations of the atom source of the Group III element are less than the supply durations of the atom source of the Group III element in the pulsed growth processes forming the rods, and in the pulsed growth processes forming the connecting portion, the supply durations of the atom source of the Group III element comprise a gradual decrease.