| 摘要 |
1315346 Crystal pulling WACKER-CHEMITRONIC GES FUR ELEKTRONIKGRUNDSTOFFE mbH 7 July 1970 [7 July 1969] 32875/70 Heading BIS Single crystals are pulled from a melt of a III-V compound which has a component volatile at the melting point of the compound, by a process wherein the stoichiometry of the melt is maintained by adjustment of the vapour pressure of the volatile component and wherein the edge of the surface of the melt, but not all the melt, is covered by molten boron oxide. A doping substance may be introduced via the vapour phase or into the melt. The examples disclose the preparation of gallium arsenide crystals, one example disclosing the doping with tellurium. |
