PRESSURE-SENSITIVE SCHOTTKY BARRIER SEMICONDUCTOR DEVICE HAVING A SUBSTANTIALLY NON-CONDUCTIVE BARRIER FOR PREVENTING UNDESIRABLE REVERSE-LEAKAGE CURRENTS AND METHOD FOR MAKING THE SAME

摘要

A pressure-sensitive semi-conductor device with a Schottky barrier in which a separation space is formed underneath the insulating film covering a major surface portion of the semi-conductor substrate and disposed adjacent a metal layer received in a recess in the substrate and extending through an opening in the insulating film, whereby the input pressure is applied to the metal layer. The separation space is formed by side-etching with the insulating film serving as mask.