| 摘要 |
SOLUTION: There is provided a phase shift mask blank having a phase shift film that is formed on a transparent substrate and has a phase shift amount of 150-200° with light having a wave length of 200 nm or less, includes at least one layer of a silicon-based material composed of silicon and nitrogen, or a silicon-based material composed of silicon, nitrogen, and oxygen, has a film thickness of 70 mm or less, and has a variation of warpage of 0.2 μm or less in terms of absolute value within 142 mm square of a transparent substrate center part between a state before the phase shift film is formed and a state after the phase shift film is formed.EFFECT: The phase shift mask blank is provided with a phase shift film which is thinner and so favorable for processing a photomask pattern, gives a high-grade phase shift mask blank excellent in dimension control properties, that is, small in displacement of a pattern position and small in reduction of dimension accuracy when producing a phase shift mask by forming a pattern with the phase shift film, and secures a phase difference necessary for a phase shift film.SELECTED DRAWING: Figure 1 |
