发明名称 PROCEDE ET DISPOSITIF DE PREPARATION DE TELLURURE DE CADMIUM SEMI-ISOLANT
摘要 1461146 Cadmium telluride AGENCE NATIONALE DE VALORISATION DE LA RECHERCHE 7 May 1974 [11 May 1973] 20056/74 Heading C1A A semi-insulating single crystal of cadmium telluride is prepared by a method in which the concentration of impurities is minimized and the proportion of dislocations, twinning and other crystal defects is reduced by carrying out the preparation in several steps, namely (a) synthesis from high purity (99À99%) cadmium and tellurium in stoichiometric proportions accompanied by crystallization at the melting point of the stoichiometric mixture, (b) purification of the cadmium telluride ingot thus obtained by not less than ten vertical zone-melting passes and (c) monocrystallization in tellurium as solvent at 452-900‹ C.
申请公布号 BE814652(A1) 申请公布日期 1974.09.02
申请号 BE19740144008 申请日期 1974.05.07
申请人 发明人 R. TRIBOULET;G. DIDIER;Y. MARFAING;A. CORNETET P. SIFFERT
分类号 C30B13/00;C30B13/02;C30B13/12;H01L31/18 主分类号 C30B13/00
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