| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask blank with a phase shift film having a prescribed transmission and a prescribed phase difference to the exposure light of an ARF excimer laser and, in the case where EB defect correction is performed, easy in the detection of the end point of etching for detecting the boundary of a light transparent substrate.SOLUTION: Provided is a mask blank in which a phase shift film being a composition gradient film of a single layer made of a material including metals, silicon, nitrogen and oxygen, having: a function of transmitting the exposure light of an ArF excimer laser by 10% or higher; and a function of producing a phase difference of 150 to 190 degrees or lower with the exposure light passed through the air by a distance same as the thickness of the phase shift film to the exposure light passed through the phase shift film, in which the ratio of the metals to the total content of the metals and silicon in the film is 5% or higher, the oxygen content in the substrate side region of the film is 10 atomic% or higher, and the oxygen content in the region other than the substrate side region is higher than that.SELECTED DRAWING: Figure 1 |
