Metal gate structure

摘要

A device comprises a metal gate structure in a trench and over a substrate, wherein the gate structure comprises a first metal sidewall in the trench, wherein the first metal sidewall becomes progressively thinner towards an upper portion of the first metal sidewall, a second metal sidewall in the trench, wherein the second metal sidewall becomes progressively thinner towards an upper portion of the second metal sidewall and a metal bottom layer on a bottom of the trench and between the first metal sidewall and the second metal sidewall.

主权项

1. A structure comprising:
a metal layer partially filling a trench of a metal gate structure, wherein the metal layer comprises:
a first metal sidewall;a second metal sidewall; anda metal bottom layer between the first metal sidewall and the second metal sidewall, wherein:
an upper portion of the first metal sidewall is thinner than a lower portion of the first metal sidewall, wherein the upper portion and the lower portion of the first metal sidewall form a first slope region, and wherein the first slope region has a vertical sidewall and a non-vertical sidewall; andan upper portion of the second metal sidewall is thinner than a lower portion of the second metal sidewall, wherein the upper portion and the lower portion of the second metal sidewall form a second slope region, and wherein the second slope region has a vertical sidewall and a non-vertical sidewall.